In situ synchrotron ARPES study on oxide thin films at Photon Factory

11.07.2017 16:00 – 17:30

In order to reveal the electronic structure of oxide thin-film surface and heterointerface, we have constructed a new beamline BL-2 MUSASHI (Multiple Undulator beamline for Spectroscopic Analysis of Surface and Hetero-Interface) and in situ angle-resolved photoemission spectroscopy (ARPES) system as an endstation of this beamline at Photon Factory, KEK. The most characteristic feature of the MUSASHI beamline is the tandem alignment of two types of undulator for vacuum ultraviolet (VUV) region (30–300 eV) and for soft x-ray (SX) region (250–2000 eV). By the combination of the two undulators, the relatively wide-energy-range light while maintaining high flux and high energy-resolution is available in this beamline.
In situ ARPES system consists of ARPES spectrometer connected to pulsed laser deposition chamber under the ultra high vacuum [1]. We can measure VUV- and SX-ARPES, core-level photoemission, and X-ray absorption spectra on the clean surface and heterointerface of the fabricated oxide thin films. This approach guarantees the quality of the experimental data, and offers numerous benefits to the field of surface science. As experimental examples carried out at MUSASHI beamline, the in situ ARPES results on oxide thin films such as La0.6Sr0.4MnO3 [2] are presented.
[1] K. Horiba et al., Rev. Sci. Instrum. 74, 3406 (2003).
[2] K. Horiba et al., Phys. Rev. Lett. 116, 076401 (2016).

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Bâtiment: Ecole de Physique

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