Hybrid MBE Growth of Atomically Precise Complex Oxides

25.06.2025 14:00 – 15:30

From its beginnings as a successful method for III–V semiconductor growth to today for the growth of many contenders for next‐generation electronics, spintronics and quantum devices, molecular beam epitaxy (MBE) has been very successful. However, several challenges exist for metal oxide growth where a metal is hard-to-oxidize and/or difficult to evaporate/sublimate. In this talk, I will review these issues and will present my group’s effort to address these challenges using a hybrid MBE approach. We show, for the first time, controlled synthesis of metal and metal oxides of these “stubborn” elements with the same ease and control as afforded by III-V MBE. I will present detailed growth study utilizing chemistry of source materials as a controlling knob to navigate synthesis. With the goal to understand and control electronic ground states in defect-managed complex oxide films and nano-membranes, I will discuss how chemistry of source materials can be used to navigate synthesis on-demand.

Lieu

Bâtiment: Ecole de Physique

salle de réunion MaNEP

entrée libre